CR812B 2.5-6MA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220BK Plastic-Encapsulate Thyristors CR812B Standard SCRs MAIN CHARACTERISTICS 8A IT( AV ) VDRM/VRRM 800V VTM 1.6V TO-220BK 1.CATHODE 2.ANODE 3.GATE FEATURES  PNPN 4-layer Structure SCRs  Mesa Glass Passivated Technology  Multi Layers Metal Electrodes APPLICATIONS  LED Controller MARKING  Motorcycle Voltage Regulator CR812B:Part Number  Hair Straightener XXX:Internal Code ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Test condition Value Unit Repetitive peak offstate voltage Tj=25℃ 800 V IT(AV) Average on-state current TO-220BK(TC≤110℃) 8 A IT(RMS) RMS on-state current TO-220BK(TC≤110℃)， Fig. 1,2 12 A ITSM Non repetitive surge peak on-state current Full sine wave ，Tj(init)=25℃, tp=20ms; Fig. 3,5 140 A I2t value tp=10ms 98 A2s Critical rate of rise of on-state current IG=2*IGT, tr≤10ns, F=120HZ, Tj=125℃ 50 A/μs Peak gate current tp=20µs, Tj=125℃ 4 A PG(AV) Average gate power Tj=125℃ 1 W TSTG Storage temperature -40~+150 Operating junction temperature -40 ~+125 VDRM/ VRRM I2t dIT/dt IGM Tj www.jscj-elec.com 1 ℃ Rev. - 1.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Test condition Symbol Parameter IGT Gate trigger current VGT Gate trigger voltage VGD Non-triggering gate voltage Tj=25℃ VD=VDRM, RL =3.3kΩ, Tj=125℃ IH Holding current IL Latching current IG=1.2IGT, dVD/dt Critical rate of rise of off-state VD=67%VDRM, Gate OPEN,Tj=125℃ VTM On-state Voltage Repetitive peak offstate current IDRM / IRRM VD= 12V, R L =33Ω, Value Min Nom Max Unit - 25 mA - - 1.0 V 0.2 - - V IT=500mA, Tj=25℃, - - 30 mA Tj=25℃, - - 50 mA 200 - - V/μs ITM=24A，Fig. 4 - - 1.6 V VD=VDRM/VRRM, Tj=25℃ - - 5 μA VD=VDRM/VRRM,Tj=125℃ - - 1 mA Tj= 25℃, Fig. 6 VD=12V, RL =33Ω, - THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) TO-220BK 1.3 ℃/W Rth (j-a) Junction to ambient TO-220BK 60 ℃/W PART NUMBER CR 8 12 www.jscj-elec.com B Standard SCRs Package Type 8:VDRM/VRRM≥800 IT(RMS)=12A 2 Rev. - 1.0 CHARACTERISTICS CURVES FIG.2: RMS on-state current versus case temperature (full cycle) 16 14 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 14 12 12 0 10 8 8 6 6 4 4 2 2 0 0 2 4 6 8 0 -50 10 12 I T(RMS) (A) 0 FIG.3: Surge peak on-state current versus number of cycles 50 150 100 Tc ) FIG.4: On-state characteristics (maximum values) I TMS (A) I TM (A) 160 200 100 Tj=Tjmax 120 80 10 40 0 Tj=25ºC 1 1 10 100 1000 Number of cycles 0.5 I TMS (A) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms I GT,I H,I L(T) / I GT,I H,I L(T=25 ) 10000 1000 100 2.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 4.5 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) 2.0 IGT 1.5 1.0 IH&IL 0.5 10 0.01 www.jscj-elec.com 0.1 1 0.0 -40 10 tp(ms) -20 0 20 40 60 80 100 120 140 Tj 3 ) Rev. - 1.0 TO-220BK Symbol http://www.jscj-elec.com/ Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 9.8 10.4 0.385 0.409 B 2.65 3.1 0.104 0.122 C 2.8 4.2 0.110 0.165 D 0.7 0.92 0.027 0.036 E 3.75 3.95 0.147 0.155 F 14.8 16.1 0.582 0.633 G 13.05 13.6 0.513 0.535 H 2.4 2.7 0.094 0.106 I 4.38 4.61 0.172 0.181 J 1.15 1.36 0.045 0.053 K 5.85 6.82 0.230 0.268 L 2.35 2.75 0.092 0.108 M 0.35 0.65 0.013 0.025 N 1.18 1.42 0.046 0.055 4